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| APT35DL120HJ ISOTOP(R)Fast Diode Full Bridge Power Module VRRM = 1200V IF = 35A @ Tc = 80C Application * * * * Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features * * * * * * * * Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration ISOTOP(R) Package (SOT-227) + ~ - Benefits * * * * * * Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant ~ Absolute maximum ratings Symbol VR VRRM IF(AV) IFRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% 8.3ms TC = 80C TJ = 45C Max ratings 1200 35 A 70 Unit V November, 2009 1-3 APT35DL120HJ - Rev 0 Maximum repetitive forward current limited by TJmax These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APT35DL120HJ All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM Diode Forward Voltage Maximum Reverse Leakage Current Test Conditions IF = 35A VR = 1200V Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min Typ 1.6 1.6 Max 2.1 250 500 Unit V A Dynamic Characteristics Symbol Characteristic trr Qrr Err Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 35A VR = 600V di/dt = 1500A/s Test Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min Typ 170 280 3.5 7 1.4 2.7 Max Unit ns C mJ Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min Typ Max 0.95 20 150 300 1.5 Unit C/W V C N.m g Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 29.2 SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 0.75 (.030) 0.85 (.033) 25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 1.95 (.077) 2.14 (.084) Dimensions in Millimeters and (Inches) www.microsemi.com 2-3 APT35DL120HJ - Rev 0 November, 2009 APT35DL120HJ Typical Performance Curve Forward Characteristic of diode 70 60 50 IF (A) 40 30 20 TJ=125C TJ=125C Energy losses vs Collector Current 5 4 Err (mJ) 3 2 1 VCE = 600V VGE = -15V TJ = 125C 10 TJ=25C 0 0 0.5 1 1.5 VF (V) 2 2.5 0 0 10 20 30 40 IF (A) 50 60 70 80 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.9 0.8 0.7 0.6 0.4 0.2 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0 0.00001 rectangular Pulse Duration (Seconds) ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 APT35DL120HJ - Rev 0 November, 2009 |
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